ISSCC 2012 / SESSION 10 / HIGH - PERFORMANCE DIGITAL / 10 . 6 10 . 6 3 D - MAPS : 3 D Massively Parallel Processor with Stacked Memory

نویسندگان

  • Dae Hyun Kim
  • Krit Athikulwongse
  • Michael Healy
  • Mohammad Hossain
  • Moongon Jung
  • Ilya Khorosh
  • Gokul Kumar
  • Young-Joon Lee
  • Dean Lewis
  • Tzu-Wei Lin
  • Chang Liu
  • Shreepad Panth
  • Mohit Pathak
  • Minzhen Ren
  • Guanhao Shen
  • Taigon Song
  • Dong Hyuk Woo
  • Xin Zhao
  • Joungho Kim
  • Ho Choi
  • Gabriel Loh
  • Hsien-Hsin Lee
  • Sung Kyu Lim
چکیده

Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration [1-4], but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM (see Fig. 10.6.1). Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5×5mm footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.

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تاریخ انتشار 2012